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  STF817 stn817 pnp medium power transistors n surface-mounting devices in medium power sot-223 and sot-89 packages n available in tape & reel packing applications n voltage regulation n relay driver n generic switch decription the STF817 and stn817 are pnp transistors manufactured using planar technology resulting in rugged high performance devices. internal schematic diagram april 2002 absolute maximum ratings symbol parameter value unit devices stn817 STF817 packages sot-223 sot-89 v cbo collector-base voltage (i e = 0) -140 v v ceo collector-emitter voltage (i b = 0) -80 v v ebo emitter-base voltage (i c = 0) -5 v i c collector current -1.5 a i cm collector peak current (t p < 5 ms) -2 a i b base current -0.3 a i bm base peak current (t p < 5 ms) -0.6 a p tot total dissipation at t c = 25 o c 1.6 1.4 w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c 1 2 2 3 sot-223 ? sot-89 type marking STF817 817 stn817 n817 1/5
thermal data sot-223 sot-89 r thj-amb thermal resistance junction-ambient max 78 89 o c/w device mounted on a pcb area of 1 cm 2 . electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be = 0) v ce = -140 v -500 m a i ceo collector cut-off current (i b = 0) v ce = -80 v -1 ma i ebo emitter cut-off current (i c = 0) v eb = -5 v -100 m a v ceo(sus) * collector-emitter sustaining voltage (i b = 0) i c = -10 ma -80 v v ce(sat) * collector-emitter saturation voltage i c = -100 ma i b = -10 ma i c = -1 a i b = -100 ma -0.25 -0.5 v v v be(sat) * base-emitter saturation voltage i c = -100 ma i b = -10 ma i c = -1 a i b = -100 ma -1 -1.1 v v h fe * dc current gain i c = -100 ma v ce = -2 v i c = -500 ma v ce = -2 v i c = -1 a v ce = -2 v 140 80 40 f t transition frequency i c = -0.1 a v ce = -10 v 50 mhz * pulsed: pulse duration = 300 m s, duty cycle 1.5 % STF817 - stn817 2/5
dim. mm inch min. typ. max. min. typ. max. a 1.80 0.071 b 0.60 0.70 0.80 0.024 0.027 0.031 b1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 d 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 e 3.30 3.50 3.70 0.130 0.138 0.146 h 6.70 7.00 7.30 0.264 0.276 0.287 v10 o 10 o a1 0.02 p008b sot-223 mechanical data STF817 - stn817 3/5
dim. mm mils min. typ. max. min. typ. max. a 1.4 1.6 55.1 63.0 b 0.44 0.56 17.3 22.0 b1 0.36 0.48 14.2 18.9 c 0.35 0.44 13.8 17.3 c1 0.35 0.44 13.8 17.3 d 4.4 4.6 173.2 181.1 d1 1.62 1.83 63.8 72.0 e 2.29 2.6 90.2 102.4 e 1.42 1.57 55.9 61.8 e1 2.92 3.07 115.0 120.9 h 3.94 4.25 155.1 167.3 l 0.89 1.2 35.0 47.2 p025h sot-89 mechanical data STF817 - stn817 4/5
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2002 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com STF817 - stn817 5/5


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